Double Node Upset Immune Rhbd-14T SRAM Cell For Space And Satellite Applications
Double Node Upset Immune Rhbd-14T SRAM Cell For Space And Satellite Applications
1 K. KEERTHANA,
PG STUDENT IN ECE, MANDAVA INSTITUTE OF ENGINEERING AND TECHNOLOGY, VIDYA NAGAR, JAGGAYYAPETA, NTR-521175, A. P.
2 M. SUSEELA,
- Tech, ASSISTANT PROFESSOR OF ECE, MANDAVA INSTITUTE OF ENGINEERING AND TECHNOLOGY, VIDYA NAGAR, JAGGAYYAPETA, NTR-521175, A. P.
ABSTRACT: Static Random Access Memory (SRAM) has become quicker and more densely integrated because to the continuous evolution of CMOS technology. But, the memory cells are now vulnerable for soft errors caused by radiation. High energy particles, such as cosmic rays and heavy ions, can cause Single Event Upsets (SEUs) and Double Node Upsets (DNUs) in space and satellite applications. These have the potential to corrupt data and reduce the system's reliability. The existing radiation hardened systems and conventional SRAM cells protect just one node from possible threats. On the other hand, issues impacting several storage nodes simultaneously are beyond their capabilities.
In this work a 14-Transistor SRAM cell using Double Node Upset Immune Radiation Hardened by Design (RHBD) is proposed which is dependably suitable for use in high altitude aircraft and satellite applications. The proposed concept includes more storage nodes, stronger feedback lines, and a self-recovery system that resets up to the proper logic state without any extra error correcting hardware. The architecture helps decrease power usage, improve stability and guarantee consistent read/writes and it will increase the tolerance for DNUs and SEUs.The RHBD-14T SRAM cell is fabricated and tested in 18 nm CMOS process. The performance of a device is judged based on its stable power, read/write stability, access time and tolerance to process, voltage and temperature variations. The simulations have shown that the suggested design is more SRAM soft-error resistant, has more static noise margin, consumes less power and faster recovery compared with conventional SRAM cells. This memory solution might be used in spacecrafts, mission-critical systems on satellites, and aircraft electronics.
Keywords: Radiation-Hardened-by-Design (RHBD), 14T SRAM, Double Node Upset (DNU), Single Event Upset (SEU), Soft Errors, Critical Charge, Space Electronics, Satellite Applications, CMOS, Radiation-Tolerant Memory.